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Diodes Incorporated DMN2013UFX-7

Tootja Osa number : DMN2013UFX-7
Tootja : Diodes Incorporated
Kirjeldus : MOSFET 2N-CH 20V 10A 6-DFN
Pliivaba olek / RoHS staatus : Lead free / RoHS Compliant
Datasheet : DMN2013UFX-7.PDF DMN2013UFX-7 PDF
Download Datasheet : DMN2013UFX-7 Details.PDF DMN2013UFX-7 PDF
EDA / CAD Models : DMN2013UFX-7 by SnapEDA
287 294 1622921 http://diodes.com/_files/datasheets/DMN2013UFX.pdf Diodes-Incorporated/DMN2013UFX-7 1622921

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Technical Parameters of DMN2013UFX-7

Series:-
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25~C:10A
Rds On (Max) @ Id, Vgs:11.5 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250米A
Gate Charge (Qg) @ Vgs:57.4nC @ 8V
Input Capacitance (Ciss) @ Vds:2607pF @ 10V
Power - Max:780mW
Operating Temperature:-55~C ~ 150~C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VFDFN Exposed Pad
Supplier Device Package:*

Toote üksikasjad

We can supply Diodes Incorporated part# DMN2013UFX-7, kasutage taotlemiseks hinnapakkumise vormi DMN2013UFX-7 hind ja tarneaeg. Nantian Electronics – ntchip.com on sõltumatu elektroonikakomponentide varude turustaja. Rohkem kui 3 miljonit saadaolevate elektroonikakomponentide rida saab tarnida lühikese tarneajaga, laos on üle 300 tuhande osanumbri elektroonikakomponendist kohe tarnimiseks, mis võib sisaldada ka osa numbrit DMN2013UFX-7. Hind ja tarneaeg DMN2013UFX-7 sõltuvalt vajalikust kogusest, saadavusest ja lao asukohast. Võtke meiega ühendust juba täna ja meie müügiesindaja pakub teile osa # hinda ja tarnimist DMN2013UFX-7. Ootame teiega äritegemist.

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