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Vishay Semiconductor Diodes Division US1DHE3_A/H

Tootja Osa number : US1DHE3_A/H
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 200V 1A DO214AC
Pliivaba olek / RoHS staatus : Lead free / RoHS Compliant
Datasheet : US1DHE3_A/H.PDF US1DHE3_A/H PDF
EDA / CAD Models : US1DHE3_A/H by SnapEDA
287 309 2204244 /Datasheets/Discrete Semiconductor Products/us1.pdf Vishay-Semiconductor-Diodes-Division/US1DHE3-A-H 2204244

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Technical Parameters of US1DHE3_A/H

Series:Automotive, AEC-Q101
Diode Configuration:Standard
Diode Type:200V
FET Type:1A
IGBT Type:1V @ 1A
Structure:Fast Recovery =< 500ns, > 200mA (Io)
Transistor Type:50ns
Triac Type:10米A @ 200V
Type:15pF @ 4V, 1MHz
Voltage:Surface Mount
Voltage - Breakover:-55~C ~ 150~C
Voltage - Off State:DO-214AC, SMA
Voltage - Zener (Nom) (Vz):DO-214AC (SMA)

Toote üksikasjad

We can supply Vishay Semiconductor Diodes Division part# US1DHE3_A/H, kasutage taotlemiseks hinnapakkumise vormi US1DHE3_A/H hind ja tarneaeg. Nantian Electronics – ntchip.com on sõltumatu elektroonikakomponentide varude turustaja. Rohkem kui 3 miljonit saadaolevate elektroonikakomponentide rida saab tarnida lühikese tarneajaga, laos on üle 300 tuhande osanumbri elektroonikakomponendist kohe tarnimiseks, mis võib sisaldada ka osa numbrit US1DHE3_A/H. Hind ja tarneaeg US1DHE3_A/H sõltuvalt vajalikust kogusest, saadavusest ja lao asukohast. Võtke meiega ühendust juba täna ja meie müügiesindaja pakub teile osa # hinda ja tarnimist US1DHE3_A/H. Ootame teiega äritegemist.

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