Introduction to the FZ800R33KF2C Power Module
The FZ800R33KF2C is a high-power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies, designed to meet the stringent requirements of modern power systems. This module is built for applications requiring high voltage and current handling capabilities, such as in power transmission and distribution systems, high-power industrial drives, and renewable energy converters. With its advanced design and robust construction, the FZ800R33KF2C facilitates efficient power management, contributing to energy-saving and system reliability improvements.
Infineon FZ800R33KF2C
Key Features and Specifications
The FZ800R33KF2C module comes with a set of features that make it suitable for demanding applications. It operates at collector-emitter voltages up to 3.3 kV, ensuring compatibility with high-voltage systems. The module supports continuous collector currents up to 1.3 kA at 25°C, making it capable of handling significant power flow. Additionally, its low collector-emitter saturation voltage of 3.4 V and gate-emitter leakage current of 400 nA optimize performance by minimizing power losses. The module’s maximum power dissipation is rated at 9.6 kW, indicative of its efficiency in managing thermal conditions under heavy loads.
Collector-Emitter Voltage VCEO Max: 3.3 kV
Collector-Emitter Saturation Voltage: 3.4 V
Continuous Collector Current at 25°C: 1.3 kA
Gate-Emitter Leakage Current: 400 nA
Power Dissipation: 9.6 kW
Operating Temperature Range: -40°C to +125°C
Package / Case: IHM, ensuring robust mechanical protection
Mounting Style: Chassis Mount, facilitating easy integration into systems
Applications
The robustness and high performance of the FZ800R33KF2C make it ideal for a wide range of applications. It is particularly suited for high-voltage and high-current applications like electrical grids, industrial motor drives, and renewable energy systems including wind turbines and solar inverters. Its high efficiency and reliability also make it a preferred choice for applications demanding rigorous power quality and uptime, such as in critical industrial processes and large-scale power conversion systems.
Benefits of Using the FZ800R33KF2C
Integrating the FZ800R33KF2C into power systems offers numerous advantages. Its high voltage and current capabilities allow for the development of powerful and efficient systems capable of managing large energy flows. The module's low saturation voltage and minimal leakage current reduce energy losses, enhancing overall system efficiency. Additionally, its wide operating temperature range and robust package design ensure reliable performance under challenging environmental conditions, contributing to the longevity and durability of power systems.
Conclusion
The FZ800R33KF2C module from Infineon Technologies represents a significant advancement in IGBT technology, providing a reliable and efficient solution for managing high power in various applications. With its exceptional performance characteristics and versatility, it enables the development of more efficient, reliable, and sustainable power systems, addressing the critical demands of today's energy landscape.
Infineon Technologies is the manufacturer of the FZ800R33KF2C, which is available in stock at Nantian. The reference price for FZ800R33KF2C can be found by referring to Infineon Technologies or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FZ800R33KF2C datasheet PDF and pin diagram description that are available for download.
FZ800R33KF2C in Stock
The FZ800R33KF2C has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FZ800R33KF2C could be downloaded from Nantian's platform.