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Toshiba Semiconductor and Storage TK160F10N1L,LQ

Manufacturer Part Number : TK160F10N1L,LQ
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : TK160F10N1L,LQ.PDF TK160F10N1L,LQ PDF
EDA / CAD Models : TK160F10N1L,LQ by SnapEDA
Quantity:
1780 1798 3635914 TK160F10N1L_datasheet_en_20200624.pdf Toshiba-Semiconductor-and-Storage/TK160F10N1L-LQ 3635914
PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SeriesU-MOSVIII-H
RoHSRoHS
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Product StatusActive
Vgs(th) (Max) @ Id3.5V @ 1mA
Operating Temperature175°C
Rds On (Max) @ Id, Vgs2.4mOhm @ 80A, 10V
Power Dissipation (Max)375W (Tc)
Supplier Device PackageTO-220SM(W)
Gate Charge (Qg) (Max) @ Vgs122 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds10100 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C160A (Ta)

The TK160F10N1L,LQ, manufactured by Toshiba Semiconductor and Storage, is a versatile and high-performance product designed for a range of applications. These include automotive uses, switching voltage regulators, DC-DC converters, and motor drivers. Its broad application spectrum is a testament to its adaptability and high functional value in various electronic systems.

Toshiba Semiconductor and Storage TK160F10N1L,LQ Genuine Reel Label

Toshiba Semiconductor and Storage TK160F10N1L,LQ Genuine Reel Label

Toshiba Semiconductor and Storage TK160F10N1L,LQ Package Diagrams:

Toshiba Semiconductor and Storage TK160F10N1L,LQ Package Diagrams

One of the key features of the TK160F10N1L,LQ is its AEC-Q101 qualification, which signifies its suitability for automotive applications. This product boasts a low drain-source on-resistance of 2.0 mΩ (typical) at a gate-source voltage of 10 V, which contributes to its efficiency. Its low leakage current of 10 μA (maximum) at a drain-source voltage of 100 V ensures minimal energy wastage, further enhancing its performance. The device operates in the enhancement mode with a threshold voltage ranging from 2.5 to 3.5 V, making it a reliable choice for various applications. 

Toshiba Semiconductor and Storage TK160F10N1L,LQ Package Original Label

Toshiba Semiconductor and Storage TK160F10N1L,LQ Package Original Label

As a professional distributor of Toshiba Semiconductor and Storage, Nantian Electronics maintains a large stock of TK160F10N1L,LQ. They also provide its parameters, datasheet PDF, and pin diagram instructions for download.

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Technical Parameters of TK160F10N1L,LQ

PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SeriesU-MOSVIII-H
RoHSRoHS
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Product StatusActive
Vgs(th) (Max) @ Id3.5V @ 1mA
Operating Temperature175°C
Rds On (Max) @ Id, Vgs2.4mOhm @ 80A, 10V
Power Dissipation (Max)375W (Tc)
Supplier Device PackageTO-220SM(W)
Gate Charge (Qg) (Max) @ Vgs122 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds10100 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C160A (Ta)

Product Details

The TK160F10N1L,LQ, manufactured by Toshiba Semiconductor and Storage, is a versatile and high-performance product designed for a range of applications. These include automotive uses, switching voltage regulators, DC-DC converters, and motor drivers. Its broad application spectrum is a testament to its adaptability and high functional value in various electronic systems.

Toshiba Semiconductor and Storage TK160F10N1L,LQ Genuine Reel Label

Toshiba Semiconductor and Storage TK160F10N1L,LQ Genuine Reel Label

Toshiba Semiconductor and Storage TK160F10N1L,LQ Package Diagrams:

Toshiba Semiconductor and Storage TK160F10N1L,LQ Package Diagrams

One of the key features of the TK160F10N1L,LQ is its AEC-Q101 qualification, which signifies its suitability for automotive applications. This product boasts a low drain-source on-resistance of 2.0 mΩ (typical) at a gate-source voltage of 10 V, which contributes to its efficiency. Its low leakage current of 10 μA (maximum) at a drain-source voltage of 100 V ensures minimal energy wastage, further enhancing its performance. The device operates in the enhancement mode with a threshold voltage ranging from 2.5 to 3.5 V, making it a reliable choice for various applications. 

Toshiba Semiconductor and Storage TK160F10N1L,LQ Package Original Label

Toshiba Semiconductor and Storage TK160F10N1L,LQ Package Original Label

As a professional distributor of Toshiba Semiconductor and Storage, Nantian Electronics maintains a large stock of TK160F10N1L,LQ. They also provide its parameters, datasheet PDF, and pin diagram instructions for download.

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