Introduction to the CM1200E4C-34N IGBT Module
The CM1200E4C-34N is an innovative IGBT (Insulated Gate Bipolar Transistor) module developed by Mitsubishi, a leader in the field of electrical and electronic equipment. This product is designed to address the needs of high-power applications, such as power transmission, renewable energy generation, and motor control systems. The CM1200E4C-34N combines high efficiency, reliability, and a wide range of operating parameters to deliver top-notch performance in managing electrical power. Its integration of cutting-edge semiconductor technology makes it an essential component for systems requiring high-speed switching and efficient power conversion.
Original CM1200E4C-34N in Stock
MITSUBISHI is the manufacturer of the CM1200E4C-34N, which is available in stock at Nantian. The reference price for CM1200E4C-34N can be found by referring to MITSUBISHI or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the CM1200E4C-34N datasheet PDF and pin diagram description that are available for download.
The CM1200E4C-34N has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to CM1200E4C-34N could be downloaded from Nantian's platform.
Key Features of the CM1200E4C-34N
The CM1200E4C-34N module offers several features that enhance its performance in demanding applications:
High Collector-Emitter Voltage: With a collector-emitter voltage of 1700V, it can efficiently handle high voltage operations, crucial for systems like power inverters and converters.
Robust Gate-Emitter Voltage Range: The ±20V gate-emitter voltage range ensures flexible control over the switching operations, contributing to the module's efficiency and responsiveness.
Substantial Collector Current: The module supports a continuous collector current of 1200A, making it capable of managing significant power levels for a wide range of applications.
Exceptional Peak Collector Current: With a maximum collector current of 2400A, it can accommodate surge currents during critical operations, providing a margin of safety and reliability.
Technical Specifications
The CM1200E4C-34N is built to meet the exacting standards required by advanced power systems, as highlighted by its technical specifications:
Collector-Emitter Voltage: 1700V, enabling the module to function in high-voltage environments effectively.
Gate-Emitter Voltage: ±20V, allowing for precise control over the module's switching activities.
Continuous Collector Current: 1200A, suitable for continuous operation under high power conditions.
Maximum Collector Current: 2400A, providing robust performance during peak demand scenarios.
The CM1200E4C-34N IGBT module from Mitsubishi represents a significant advancement in power electronics technology. Its combination of high voltage and current handling capabilities, along with efficient thermal management and durability, make it an ideal solution for engineers and designers working on complex power systems. Whether for industrial, transportation, or energy applications, the CM1200E4C-34N offers a blend of performance, reliability, and innovation that meets the challenges of modern power conversion and control.
CM1200E4C-34N Physical Picture