Product Overview:
Samsung's K4F8E304HB-MGCJ, belonging to their advanced LPDDR4X series, is a cutting-edge mobile DRAM designed to meet the demands of contemporary high-performance devices. With its ability to deliver high-speed data transfer while maintaining low power consumption, it offers an ideal solution for various applications including smartphones, tablets and other portable devices.
K4F8E304HB-MGCJ box packaging picture and label
Key Features:
High Speed: Provides up to 4266 Mbps speed per pin.
Low Power Consumption: Designed with advanced technology that ensures efficient performance without excessive energy draw.
Compact Package: The device comes in a compact FBGA package which makes it suitable for slim and lightweight devices.
Technical Specifications:
Ideal Applications:
This versatile mobile DRAM can be effectively used in scenarios including:
Smartphones and Tablets where quick access to stored information is essential.
Wearable devices requiring fast processing speeds within compact footprints.
Portable gaming consoles demanding swift graphic rendering.
Competitive Advantages:
Compared with similar products on the market:
The K4F8E304HB-MGCJ offers higher data rate allowing faster access times enhancing user experience across applications.
It supports lower power consumption ensuring sustainable operation even under heavy usage conditions.
Backed by Samsung's reputation for quality and support, customers benefit from comprehensive design resources easing integration efforts into diverse designs.
K4F8E304HB-MGCJ Same series model
The Samsung Semiconductor K4F8E304HB-MGCJ is part of the LPDDR4X SDRAM series. These are high-speed, low-power memory devices designed for use in a wide range of applications such as mobile phones, tablets, and other consumer electronics.
Other models in this series include:
K3UH5H50MM-AGCJ: This model has 32Gb density with data rate speeds up to 4266Mbps. It operates at an I/O voltage of 0.6V.
K3UH7H70AM-AGCJ: A larger device with a density of 64Gb and similar data rates (up to 4266Mbps). The operating I/O voltage remains the same at 0.6V.
K3U4E640JM-BGCJ: This variant features lower density (16Gb) but higher data rates (up to 5500 Mbps), also operating at an I/O voltage of 0.6V.
All these variants have similar key features as they belong to the same LPDDR4X SDRAM series:
They support multiple power-saving modes
They offer high speed for intensive graphics and AI processing
They operate on low-voltage thus saving power
K4F8E304HB-MGCJ alternative models
Here are some alternative models from the same LPDDR4X series:
K3UH5H50MM-AGCJ: This model also has a density of 32Gb with data rate speeds up to 4266Mbps. It operates at an I/O voltage of 0.6V.
K3UB7D40BM-AGCJ: A larger device with a density of 64Gb but similar data rates (up to 4266Mbps). The operating I/O voltage remains the same at 0.6V.
K3UH2H20AM-AGCL: This variant features lower density (16Gb) but higher data rates (up to 5500 Mbps), also operating at an I/O voltage of 0.6V.
All these variants have similar key features as they belong to the same LPDDR4X SDRAM series:
They support multiple power-saving modes
They offer high speed for intensive graphics and AI processing
They operate on low-voltage thus saving power
However, their primary differences lie in their capacity or "density" and speed/data transfer rates which can greatly affect what kind of design you can implement using them.
When choosing among them or other parts within the same product line, consider your specific application requirements such as required memory size/density for storing program code or data, speed requirement based on your processor's capability etc., along with considerations like power consumption/efficiency especially if it's intended for battery-powered devices.