Introduction to the RA30H3847M1-501 RF MOSFET Amplifier Module by MITSUBISHI
The RA30H3847M1-501 is a robust RF MOSFET Amplifier Module designed by MITSUBISHI, catering specifically to mobile radios. This module operates within the UHF range, covering frequencies from 378 to 470 MHz. It is engineered to deliver a high output power exceeding 30 watts, which facilitates clear and reliable signal transmission. The incorporation of enhancement-mode MOSFET transistors allows for a highly efficient power conversion, and the direct battery connection to the drain of these transistors simplifies the design and integration process. This module is particularly noted for its effective spurious radiation management, courtesy of its metal shield structure.
Mitsubishi is the manufacturer of the RA30H3847M1-501, which is available in stock at Nantian. The reference price for RA30H3847M1-501 can be found by referring to Mitsubishi or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the RA30H3847M1-501 datasheet PDF and pin diagram description that are available for download.
The RA30H3847M1-501 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to RA30H3847M1-501 could be downloaded from Nantian's platform.
Key Features
Operates in the UHF frequency range of 378 to 470 MHz, suitable for a broad spectrum of mobile radio applications.
Delivers more than 30 watts of output power, ensuring strong and clear communication.
Enhancement-mode MOSFET transistors for high efficiency and performance.
Direct battery connection support, enhancing power management and simplifying the design.
Metal shield structure for simplified improvements in spurious radiation control.
Technical Specifications
Output power greater than 30W, with efficiency higher than 42% at a supply voltage of 12.5V and gate voltage of 5V, based on an input power of 50mW.
Designed to work with a broad frequency range from 378 to 470MHz, accommodating a wide variety of communication needs within the UHF spectrum.
Low-power control current with a typical gate current of 1 mA at VGG=5V, indicating efficient operation.
Module dimensions of 67 x 19.4 x 9.9 mm, allowing for compact system integration.
Applications and Integration
The MITSUBISHI RA30H3847M1-501 RF MOSFET Amplifier Module is an indispensable component for UHF mobile radio systems, providing high power output and reliability. Its operational flexibility across a wide UHF frequency range makes it suitable for various communication applications, including public safety, commercial, and amateur radio. The module's design, featuring a metal shield for spurious radiation control, ensures a high-quality signal transmission with minimal interference. Moreover, its compact size and the ability to directly connect to a 12.5-volt battery system make it a versatile choice for designing mobile and portable communication devices.