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Texas Instruments TPS1120DG4

   
Fabrikant Varenummer : TPS1120DG4
Fabrikant : Texas Instruments
Beskrivelse : MOSFET 2P-CH 15V 1.17A 8-SOIC
Blyfri status / RoHS-status : Lead free / RoHS Compliant
Datasheet : TPS1120DG4.PDF TPS1120DG4 PDF
EDA / CAD Models : TPS1120DG4 by SnapEDA
Stock Condition :In Stock 375, New Original
Delivery:
Payment:
287 294 6511532 http://www.ti.com/lit/ds/symlink/tps1120.pdf Texas-Instruments/TPS1120DG4
Series:-
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):15V
Current - Continuous Drain (Id) @ 25~C:1.17A
Rds On (Max) @ Id, Vgs:180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250米A
Gate Charge (Qg) @ Vgs:5.45nC @ 10V
Input Capacitance (Ciss) @ Vds:-
Power - Max:840mW
Operating Temperature:-40~C ~ 150~C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC

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Tekniske parametre for TPS1120DG4

Series:-
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):15V
Current - Continuous Drain (Id) @ 25~C:1.17A
Rds On (Max) @ Id, Vgs:180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250米A
Gate Charge (Qg) @ Vgs:5.45nC @ 10V
Input Capacitance (Ciss) @ Vds:-
Power - Max:840mW
Operating Temperature:-40~C ~ 150~C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC

Produktdetaljer

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