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Microsemi Corporation 2735GN-100M

Tootja Osa number : 2735GN-100M
Tootja : Microsemi Corporation
Kirjeldus : FETS RF GAN 150V 2.7-3.5GHZ 55QP
Pliivaba olek / RoHS staatus : Lead free / RoHS Compliant
Datasheet : 2735GN-100M.PDF 2735GN-100M PDF
Download Datasheet : 2735GN-100M Details.PDF 2735GN-100M PDF
EDA / CAD Models : 2735GN-100M by SnapEDA
287 303 2108283 Microsemi-Corporation/2735GN-100M 2108283

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Technical Parameters of 2735GN-100M

Series:-
Transistor Type:2 N-Channel (Dual) Common Source
Frequency:2.7GHz ~ 3.5GHz
Voltage - Collector Emitter Breakdown (Max):11dB ~ 11.4dB
Frequency - Transition:60V
Gain:2.5mA
Noise Figure (dB Typ @ f):-
Voltage - Test:250mA
Current Rating:110W
Noise Figure:150V
Power - Max:55QP
Current - Test:55QP

Toote üksikasjad

We can supply Microsemi Corporation part# 2735GN-100M, kasutage taotlemiseks hinnapakkumise vormi 2735GN-100M hind ja tarneaeg. Nantian Electronics – ntchip.com on sõltumatu elektroonikakomponentide varude turustaja. Rohkem kui 3 miljonit saadaolevate elektroonikakomponentide rida saab tarnida lühikese tarneajaga, laos on üle 300 tuhande osanumbri elektroonikakomponendist kohe tarnimiseks, mis võib sisaldada ka osa numbrit 2735GN-100M. Hind ja tarneaeg 2735GN-100M sõltuvalt vajalikust kogusest, saadavusest ja lao asukohast. Võtke meiega ühendust juba täna ja meie müügiesindaja pakub teile osa # hinda ja tarnimist 2735GN-100M. Ootame teiega äritegemist.

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