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ON Semiconductor NHPM220T3G

Valmistaja Osa numero : NHPM220T3G
Valmistaja : ON Semiconductor
Kuvaus : Puf 2A 200V In Powermite/Reel Rohs Compliant: Yes
Lyijytön tila / RoHS-tila : Lead free / RoHS Compliant
Datasheet : NHPM220T3G.PDF NHPM220T3G PDF
EDA / CAD Models : NHPM220T3G by SnapEDA
Määrä:
287 293 1619929 /datasheets/Discrete Semiconductor Products/ON-NHPM220T3G-1619929.pdf ON/NHPM220T3G 1619929

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Technical Parameters of NHPM220T3G

Series:-
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.05V @ 2A
Speed:Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-65~C ~ 175~C

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Overview of NHPM220

The NHPM220 is a single diode product from the discrete semiconductor products category, manufactured by onsemi. It's important to note that this model is currently listed as obsolete.

NHPM220T3G spot picture | packed in tape and reel

NHPM220T3G spot picture

Product Technical Characteristics

  • Voltage - DC Reverse (Vr) (Max): This diode can handle up to 200 V in reverse bias condition.

  • Current - Average Rectified (Io): The average rectified forward current for this device is rated at 2A.

  • Voltage - Forward (Vf) (Max) @ If: The maximum forward voltage drop across the diode at its rated forward current of 2A is 1.05 V.

  • Speed: NHPM220 falls under fast recovery category with recovery time less than or equal to 500ns and more than 200mA Io.

  • Reverse Recovery Time (trr): This parameter measures the time taken for the diode to switch from conducting state in forward bias condition to non-conducting state in reverse bias condition. For NHPM220, it stands at just 50 ns.

Additional Features & Specifications

  • Current - Reverse Leakage @ Vr: The leakage current when applied voltage is maximum i.e.,@200V, accounts for only about negligible amount of power loss, making it efficient even during off-state conditions.

  • Packaging:The component comes packaged as Tape & Reel(TR), which makes it suitable for automated assembly processes.

  • Packaging Case/ Supplier Device Package:In a DO-216AA package / Powermite format which offers compact footprint and robust performance characteristics.

  • Junction Operating Temperature:A wide operating temperature range from -65°C up till +175°C makes these devices versatile across various environmental conditions.

Application of NHPM220T3G

Original NHPM220T3G and its product label

Product label

The NHPM220T3G from ON Semiconductor is a fast recovery diode that can be used in various applications due to its technical characteristics. Here are some common application areas:

  1. Power Supply Circuits: Due to their ability to handle high reverse voltages and currents, these diodes are often used in power supply circuits for rectification purposes.

  2. Reverse Polarity Protection: These diodes can be used in circuits where protection from reverse polarity is needed, such as battery chargers or automotive electronics.

  3. Switching Power Supplies: The fast recovery time makes them suitable for use in switching power supplies where quick switching between on/off states is required.

  4. Motor Control Circuits: They can also be found within motor control circuits, providing necessary voltage/current handling capabilities and speed of operation.

  5. Voltage Clamping Applications:In scenarios where voltage needs to be limited or clamped to protect the circuit components from damage due to overvoltage conditions.

  6. Rf Signal Detection: Fasts recovery diodes like this one have uses in radio frequency (RF) signal detection as well.

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