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Infineon Technologies FF650R17IE4

Gyártó Cikkszám : FF650R17IE4
Gyártó : Infineon Technologies
Leírás : IGBT Silicon Module 4.15 kW
Ólommentes állapot / RoHS állapot : Lead free / RoHS Compliant
Datasheet : FF650R17IE4.PDF FF650R17IE4 PDF
EDA / CAD Models : FF650R17IE4 by SnapEDA
Mennyiség:
483 484 887041 /datasheets/Modules/Infineon-Technologies-FF650R17IE4-887041.pdf infineon-technologies/ff650r17ie4 887041

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Technical Parameters of FF650R17IE4

Product AttributeAttribute Value
Manufacturer:Infineon
Product Category:IGBT Modules
RoHS: Details
REACH - SVHC:Details
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1.7 kV
Collector-Emitter Saturation Voltage:2 V
Continuous Collector Current at 25 C:930 A
Gate-Emitter Leakage Current:400 nA
Pd - Power Dissipation:4.15 kW
Package / Case:PRIME2
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 150 C
Packaging:Tray
Brand:Infineon Technologies
Height:38 mm
Length:172 mm
Maximum Gate Emitter Voltage:20 V
Mounting Style:Chassis Mount
Product Type:IGBT Modules
Series:Trenchstop IGBT4 - E4
Factory Pack Quantity:3
Subcategory:IGBTs
Technology:Si


termék leírás

Overview

The FF650R17IE4 is an IGBT (Insulated Gate Bipolar Transistor) Silicon Module manufactured by Infineon Technologies. It falls under the IGBT Modules category, featuring a dual configuration suitable for various applications requiring high power and voltage capabilities.

FF650R17IE4 Pins

FF650R17IE4 Pin Configuration

Key Specifications

  • Collector-Emitter Voltage (VCEO Max): 1.7 kV

  • Collector-Emitter Saturation Voltage: 2 V

  • Continuous Collector Current at 25°C: 930 A

  • Gate-Emitter Leakage Current: 400 nA

  • Power Dissipation (Pd): 4.15 kW

  • Maximum Gate Emitter Voltage: 20 V

  • Minimum Operating Temperature: -40°C

  • Maximum Operating Temperature: +150°C

Features

The FF650R17IE4 is built with high-quality materials and advanced technology, ensuring reliable performance in demanding environments. Its features include:

  • Dual configuration for enhanced flexibility and efficiency.

  • PRIME2 package/case design for optimal thermal management and mechanical stability.

  • RoHS compliance, meeting environmental standards for hazardous substances.

  • REACH-SVHC details provided for transparency regarding chemical usage.

  • Chassis mount mounting style for convenient installation.

  • Tray packaging for secure transportation and storage.

Applications

The FF650R17IE4 IGBT Silicon Module is suitable for a wide range of applications, including:

  • Industrial motor drives

  • Renewable energy systems

  • Power supplies

  • Electric vehicles

  • Grid infrastructure

Conclusion

Infineon Technologies' FF650R17IE4 offers high-performance and reliability, making it an ideal choice for applications requiring robust power management solutions. With its advanced features and comprehensive specifications, it provides engineers with the flexibility and efficiency needed to meet diverse project requirements.

Infineon is the manufacturer of the FF650R17IE4, which is available in stock at Nantian. The reference price for FF650R17IE4 can be found by referring to Infineon or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FF650R17IE4 datasheet PDF and pin diagram description that are available for download.

Original FF650R17IE4 side view

Original FF650R17IE4 side view

The FF650R17IE4 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FF650R17IE4 could be downloaded from Nantian's platform.

FF650R17IE4 Related Products

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