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Infineon Technologies FZ2400R17HP4_B9

Gamintojas Dalies numeris : FZ2400R17HP4_B9
Gamintojas : Infineon Technologies
apibūdinimas : IGBT4 - P4 Module 1700 V 2400A
Lead Free Status / RoHS būsena : Lead free / RoHS Compliant
Datasheet : FZ2400R17HP4_B9.PDF FZ2400R17HP4_B9 PDF
EDA / CAD Models : FZ2400R17HP4_B9 by SnapEDA
483 484 888089 /datasheets/Modules/Infineon-Technologies-FZ2400R17HP4-B9-888089.pdf infineon-technologies/fz2400r17hp4-b9 888089

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Technical Parameters of FZ2400R17HP4_B9

ConfigurationSingle switch
Dimensions (width)140 mm
Dimensions (length)190 mm
HousingIHM B
IC(nom) / IF(nom)2400 A
IC        max2400 A
QualificationIndustrial
TechnologyIGBT4 - P4
VCE(sat) (Tvj=25°C typ)1.9 V
VCES / VRRM1700 V
VF (Tvj=25°C typ)1.8 V
Voltage Class        max1700 V

Produkto Aprašymas

Overview of the FZ2400R17HP4_B9 IGBT Module

The FZ2400R17HP4_B9 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, a leading manufacturer of power semiconductor devices. This module is designed for power electronics applications that require efficient and reliable switching of high currents and voltages. The FZ2400R17HP4_B9 features a single switch configuration, making it suitable for use in various power conversion systems, such as motor drives, uninterruptible power supplies (UPS), and renewable energy inverters.

FZ2400R17HP4_B9 Pinout

As a professional Infineon Technologies distributor, Nantian Electronic has a large number of FZ2400R17HP4_B9 in stock. We also provide FZ2400R17HP4_B9 parameters, FZ2400R17HP4_B9 Datasheet PDF and pin diagram instructions for download.

Key Specifications and Ratings

The FZ2400R17HP4_B9 offers impressive specifications that highlight its high-performance capabilities. With a maximum voltage class of 1700 V, this module can handle high voltage applications. The nominal collector current (IC(nom)) and forward current (IF(nom)) are both rated at 2400 A, making it suitable for high-current applications. The collector-emitter saturation voltage (VCE(sat)) is typically 1.9 V at a junction temperature (Tvj) of 25°C, ensuring low power losses during conduction. The forward voltage (VF) is typically 1.8 V at a junction temperature of 25°C, contributing to the module's overall efficiency.

Technology and Packaging

  • IGBT4 Technology: The FZ2400R17HP4_B9 utilizes Infineon's advanced IGBT4 - P4 technology, which offers improved switching performance, lower losses, and higher efficiency compared to previous generations of IGBTs.

  • IHM B Housing: The module is housed in Infineon's IHM B package, which provides excellent electrical insulation, thermal performance, and mechanical stability. The housing dimensions are 140 mm in width and 190 mm in length, making it compact and suitable for space-constrained applications.

FZ2400R17HP4_B9 size

FZ2400R17HP4_B9 size

Qualification and Reliability

The FZ2400R17HP4_B9 is qualified for industrial use, ensuring its suitability for demanding power electronics applications. Infineon Technologies employs strict quality control measures and rigorous testing procedures to guarantee the reliability and performance of their IGBT modules.

Applications and Benefits

The FZ2400R17HP4_B9 IGBT module is suitable for a wide range of power electronics applications, including:

  • Motor drives

  • Uninterruptible power supplies (UPS)

  • Renewable energy inverters

  • High-voltage switching systems

The module's high-performance specifications, advanced IGBT4 technology, and compact packaging make it an ideal choice for designers and engineers looking to build efficient, reliable, and space-saving power electronics systems. By using the FZ2400R17HP4_B9, designers can benefit from reduced system size, improved thermal management, and increased overall system efficiency.

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