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Infineon Technologies FF1400R17IP4

Производитель номер части : FF1400R17IP4
Производитель : Infineon Technologies
Описание : 1.75 V 9.55 kW IGBT Module
Безсвинцовый статус / статус RoHS : Lead free / RoHS Compliant
Datasheet : FF1400R17IP4.PDF FF1400R17IP4 PDF
EDA / CAD Models : FF1400R17IP4 by SnapEDA
Количество:
483 484 888836 /datasheets/Modules/Infineon-Technologies-FF1400R17IP4-888836.pdf infineon-technologies/ff1400r17ip4 888836

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Technical Parameters of FF1400R17IP4

Product AttributeAttribute Value
Manufacturer:Infineon
Product Category:IGBT Modules
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1.7 kV
Collector-Emitter Saturation Voltage:1.75 V
Continuous Collector Current at 25 C:1.4 kA
Gate-Emitter Leakage Current:400 nA
Pd - Power Dissipation:9.55 kW
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 150 C
Packaging:Tray
Brand:Infineon Technologies
Maximum Gate Emitter Voltage:20 V
Mounting Style:Chassis Mount
Product Type:IGBT Modules
Series:Trench/Fieldstop IGBT4 - P4
Factory Pack Quantity:2
Subcategory:IGBTs
Technology:Si

информация о продукте

Introduction to Infineon's FF1400R17IP4

The FF1400R17IP4, manufactured by Infineon Technologies, is a noteworthy addition to the IGBT Silicon Modules category. It features a dual configuration and is designed to deliver exceptional performance in various power electronics applications, showcasing Infineon's commitment to innovation and reliability.

Original Infineon FF1400R17IP4

Original Infineon FF1400R17IP4

Key Specifications and Features

With a maximum collector-emitter voltage (VCEO) of 1.7 kilovolts (kV), the FF1400R17IP4 ensures robustness and durability in high-voltage scenarios. Its collector-emitter saturation voltage of 1.75 volts (V) and continuous collector current of 1.4 kiloamperes (kA) at 25 degrees Celsius attest to its capability to handle substantial power loads efficiently.

The module's gate-emitter leakage current of 400 nanoamperes (nA) and power dissipation (Pd) of 9.55 kilowatts (kW) further underline its reliability and energy efficiency, making it a versatile choice for demanding industrial applications.

Design and Technology

The FF1400R17IP4 is designed using silicon (Si) technology, known for its performance and reliability in semiconductor applications. Its chassis-mounting style facilitates easy integration into power electronic systems, ensuring stability and longevity in diverse operating environments.

Operating Conditions and Packaging

Operating within a temperature range of -40 degrees Celsius to +150 degrees Celsius, this module is well-suited for both extreme cold and hot environments, offering operational flexibility and resilience. Packaged in trays, it is convenient for handling and integration into production lines, streamlining manufacturing processes.

Applications of the FF1400R17IP4

The FF1400R17IP4 IGBT module from Infineon Technologies is engineered for high performance and efficiency, making it an ideal choice for a wide array of applications. Its robust specifications, including high collector-emitter voltage, significant current capacity, and efficient power dissipation, enable it to excel in various demanding environments.

  • Renewable energy systems, such as solar inverters and wind turbine converters, where high efficiency and reliability are crucial for converting and managing power.

  • Electric vehicle (EV) charging stations, supporting the rapid and efficient charging of electric vehicles, by ensuring stable power conversion.

  • Industrial motor drives, offering precise control and high efficiency for motors in manufacturing plants, thereby improving performance and reducing energy consumption.

  • High-power UPS (Uninterruptible Power Supply) systems, providing critical backup power solutions with high reliability and efficiency.

  • Power transmission and distribution systems, enhancing the control and efficiency of electrical power flow in grid applications.

  • Rail traction systems, contributing to the efficient and reliable operation of electric trains by managing high power levels.

This versatility and capability to operate under a wide temperature range make the FF1400R17IP4 a key component in advancing the efficiency and reliability of modern power electronic systems across various sectors.

FF1400R17IP4 Datasheet

Download datasheets and manufacturer documentation for FF1400R17IP4.

Conclusion

Infineon Technologies' FF1400R17IP4 IGBT silicon module represents a blend of advanced technology, high performance, and robust design. With its dual configuration, high voltage and current capacities, low leakage current, and efficient power dissipation, this module caters to the stringent requirements of modern power electronics, making it a preferred choice among engineers and designers.

Infineon Technologies is the manufacturer of the FF1400R17IP4, which is available in stock at Nantian. The reference price for FF1400R17IP4 can be found by referring to Infineon Technologies or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FF1400R17IP4 datasheet PDF and pin diagram description that are available for download.

One box in stock FF1400R17IP4

One box in stock FF1400R17IP4

The FF1400R17IP4 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FF1400R17IP4 could be downloaded from Nantian's platform.

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