Introduction to the RA30H1317M1 RF MOSFET Amplifier Module by MITSUBISHI
The RA30H1317M1 is a high-performance RF MOSFET Amplifier Module developed by MITSUBISHI for use in mobile radios. This module is specifically designed to operate in the VHF range of 135 to 175 MHz, making it an ideal choice for communication applications. It is capable of delivering a powerful output of 30 watts, ensuring clear and reliable transmission over distances. The module's design allows for direct battery connection to the MOSFET transistors' drain, simplifying the power supply configuration and enhancing the device's overall efficiency.
RA30H1317M1-501
Mitsubishi is the manufacturer of the RA30H1317M1-501, which is available in stock at Nantian. The reference price for RA30H1317M1-501 can be found by referring to Mitsubishi or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the RA30H1317M1-501 datasheet PDF and pin diagram description that are available for download.
The RA30H1317M1-501 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
RA30H1317M1-501 in Stock
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to RA30H1317M1-501 could be downloaded from Nantian's platform.
Key Features
Operational frequency range of 135 to 175 MHz, catering to VHF mobile radio applications.
30-watt nominal output power, providing strong signal transmission capabilities.
Direct battery connection capability, enabling efficient power usage and simplifying system design.
Variable gate voltage from 3.5V (minimum) to 5V (maximum), allowing for adjustable output power and drain current for optimal performance.
Designed for non-linear FM modulation, with the flexibility for linear modulation applications by adjusting the drain quiescent current and input power.
Technical Specifications
Enhancement-mode MOSFET transistors, ensuring high efficiency and performance.
Nominal output power available with a typical gate voltage of 4V, reaching up to 5V for maximum output.
Typical gate current of 1 mA at VGG=5V, indicating low power consumption during operation.
Ability to adjust output power and drain current through the gate voltage, offering versatility in use.
Supports a direct connection to 12.5-volt battery systems, facilitating ease of integration into existing setups.
Applications and Integration
The MITSUBISHI RA30H1317M1 RF MOSFET Amplifier Module is an essential component for mobile radios operating in the VHF range. Its robust design and high output power make it suitable for a variety of communication applications, from amateur radio to professional mobile communication systems. The flexibility in modulation type and the ability to adjust power levels through gate voltage adjustments provide designers with the capability to tailor the module to specific requirements. Additionally, its compatibility with 12.5-volt battery systems and the efficiency of its MOSFET transistors make it a practical choice for mobile and portable communication devices.
Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V)
Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
Broadband Frequency Range: 135-175MHz
Low-Power Control Current IGG=1mA (typ) at VGG=5V
Module Size: 67 x 19.4 x 9.9 mm