Introduction to FF1000R17IE4 IGBT Silicon Module
The FF1000R17IE4 is a high-performance IGBT Silicon Module manufactured by Infineon. It is part of Infineon's comprehensive range of IGBT Modules, designed to provide efficient and reliable performance across a variety of applications. This module is characterized by its dual configuration, which allows for increased flexibility and efficiency in system design.
Infineon FF1000R17IE4
Key Specifications and Features
The FF1000R17IE4 IGBT Silicon Module boasts a maximum Collector-Emitter Voltage (VCEO) of 1.7 kV, providing a robust performance under high voltage conditions. The module has a Collector-Emitter Saturation Voltage of 2.45 V and can sustain a Continuous Collector Current at 25 C of 1.39 kA, demonstrating its ability to handle high current loads. Furthermore, the module has a Gate-Emitter Leakage Current of 400 nA, ensuring minimal energy loss during operation. The power dissipation capacity of the module is 6.25 kW, ensuring efficient power management and heat dissipation during operation.
Operating Conditions and Dimensions
The FF1000R17IE4 IGBT Silicon Module is designed to operate under a wide temperature range, with a minimum operating temperature of - 40 C and a maximum operating temperature of + 150 C. This wide temperature range allows the module to maintain optimal performance under various environmental conditions. The module measures 250 mm in length and 38 mm in height, making it compact enough for integration into a wide range of systems.
Mounting Style and Packaging
The FF1000R17IE4 IGBT Silicon Module utilizes a chassis mount style, offering a secure and reliable method of installation. The module is packaged in a PRIME3 case, ensuring its protection during transportation and handling. The packaging method for this module is a tray, which allows for efficient storage and distribution.
Brand and Product Type
The FF1000R17IE4 IGBT Silicon Module is a proud product of Infineon Technologies, a globally recognized and respected manufacturer in the field of semiconductor and system solutions. The product type falls under the category of IGBT Modules, which are renowned for their high efficiency and reliability in a wide array of applications.
Maximum Gate Emitter Voltage
The FF1000R17IE4 IGBT Silicon Module is capable of withstanding a Maximum Gate Emitter Voltage of 20 V. This specification highlights the module's ability to handle high voltage levels, further enhancing its robustness and reliability in demanding operational conditions.
Buying Guide
Infineon Technologies is the manufacturer of the FF1000R17IE4, which is available in stock at Nantian. The reference price for FF1000R17IE4 can be found by referring to Infineon Technologies or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FF1000R17IE4 datasheet PDF and pin diagram description that are available for download.
The back of FF1000R17IE4
The FF1000R17IE4 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FF1000R17IE4 could be downloaded from Nantian's platform.