Introduction to the FF400R17KF6C_B2 IGBT Module
The FF400R17KF6C_B2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module offered by Infineon Technologies, a leader in semiconductor solutions. This dual configuration module is designed for efficient and reliable operation in high-power applications such as electric vehicle drives, industrial motor controls, and renewable energy inverters. With its advanced silicon technology, the FF400R17KF6C_B2 ensures optimal performance for systems requiring high voltage and current handling capabilities, combined with energy efficiency and thermal management.
Infineon FF400R17KF6C_B2 in Stock
Infineon Technologies is the manufacturer of the FF400R17KF6C_B2, which is available in stock at Nantian. The reference price for FF400R17KF6C_B2 can be found by referring to Infineon Technologies or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FF400R17KF6C_B2 datasheet PDF and pin diagram description that are available for download.
The FF400R17KF6C_B2 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FF400R17KF6C_B2 could be downloaded from Nantian's platform.
Key Features of the FF400R17KF6C_B2
This IGBT module is distinguished by its superior features, tailored for demanding power electronics environments:
High Collector-Emitter Voltage: Rated at 1.7 kV, it supports high voltage applications, ensuring reliable operation under strenuous conditions.
Low Collector-Emitter Saturation Voltage: The saturation voltage of 2.6 V contributes to enhanced efficiency, reducing power loss during operation.
High Continuous Collector Current: With a capacity of 650 A at 25°C, it can manage significant power flows, suitable for a wide range of applications.
Minimal Gate-Emitter Leakage Current: The leakage current of 400 nA underscores the module's efficient design and control fidelity.
Powerful Dissipation Capability: A maximum power dissipation of 3.3 kW enables it to handle rigorous thermal conditions during high power operations.
Technical Specifications
The FF400R17KF6C_B2 boasts specifications that highlight its application versatility and performance reliability:
Maximum Collector-Emitter Voltage (VCEO): 1.7 kV, facilitating its use in high-voltage settings.
Collector-Emitter Saturation Voltage: 2.6 V, ensuring low operational losses.
Continuous Collector Current at 25°C: 650 A, demonstrating its capability to support heavy-duty operations.
Gate-Emitter Leakage Current: 400 nA, indicating precise control and minimal energy wastage.
Thermal Working Range: Operates within a temperature range from -40°C to +125°C, suitable for various environmental conditions.
Physical Dimensions: With a height of 38 mm and length of 140 mm, designed for chassis mount installation, ensuring compatibility with a range of industrial systems.
The FF400R17KF6C_B2 IGBT module from Infineon Technologies embodies the convergence of robust design, high power handling, and efficiency. It is engineered to meet the exacting requirements of modern power electronics systems, offering a reliable and efficient solution for managing electricity in a variety of applications. Its combination of high voltage and current capabilities, together with effective thermal management and compact design, makes it an exemplary choice for professionals seeking to innovate in the field of power electronics.