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Mitsubishi RA30H4047M

제조사 부품 번호 : RA30H4047M
제조사 : Mitsubishi
설명 : RF MOSFET Amplifier VDD=12.5V VGG=5V
무연 상태/RoHS 상태 : Lead free / RoHS Compliant
Datasheet : RA30H4047M.PDF RA30H4047M PDF
EDA / CAD Models : RA30H4047M by SnapEDA
487 488 3233810 /datasheets/Module/Mitsubishi-RA30H4047M-3233810.pdf mitsubishi/ra30h4047m 3233810

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Technical Parameters of RA30H4047M

제품 세부 정보

Introduction to the RA30H4047M RF MOSFET Amplifier Module by Mitsubishi

The RA30H4047M is a cutting-edge RF MOSFET Amplifier Module developed by Mitsubishi, aimed at enhancing the performance of mobile radios. This module operates within the UHF frequency band, specifically between 400 to 470 MHz, making it ideal for a wide range of communication systems. It boasts a high output power capability of over 30 watts, coupled with a high efficiency that ensures reliable and clear signal transmission. The module utilizes enhancement-mode MOSFET transistors, which contribute to its high efficiency and performance. Additionally, it supports direct battery connection, which simplifies power management and system design. Its capability for linear operation through quiescent drain current adjustment and output power control via input power makes it versatile for various applications.

One box of RA30H4047M

Original RA30H4047M

Key Features

  • Designed to operate within the UHF frequency band of 400 to 470 MHz, catering to a broad range of mobile communication systems.

  • Capable of delivering an output power of more than 30 watts, ensuring strong and reliable communication signals.

  • Utilizes enhancement-mode MOSFET transistors for optimized efficiency and performance.

  • Allows for direct connection to the battery, enhancing power efficiency and easing system integration.

  • Supports linear operation by adjusting the quiescent drain current and controlling the output power based on the input power.

  • Compact module dimensions of 66 x 21 x 9.88 mm, facilitating easy integration into various devices.

Technical Specifications

  • High output power exceeding 30W, with an efficiency greater than 40% at a supply voltage of 12.5V and a gate voltage of 5V, given an input power of 50mW.

  • Broadband frequency coverage from 400 to 470MHz, suitable for a variety of UHF mobile radio applications.

  • Low-power control current with a typical gate current of 1 mA at VGG=5V, indicating efficient operation and low power consumption.

  • Module size of 66 x 21 x 9.88 mm, which supports compact system design and integration.

Applications and Integration

The Mitsubishi RA30H4047M RF MOSFET Amplifier Module is a crucial component for mobile radios operating within the UHF band, offering high power and efficiency for reliable communications. Its wide frequency range makes it suitable for public safety, commercial, and amateur radio applications. The module's ability to perform in linear mode by adjusting the quiescent drain current and controlling output power through input power provides flexibility for various communication needs. Furthermore, its compact size and battery connection capability make it an excellent choice for mobile and portable communication devices, ensuring robust and clear signal transmission across different scenarios.

Mitsubishi is the manufacturer of the RA30H4047M, which is available in stock at Nantian. The reference price for RA30H4047M can be found by referring to Mitsubishi or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the RA30H4047M datasheet PDF and pin diagram description that are available for download.

The RA30H4047M has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to RA30H4047M could be downloaded from Nantian's platform.

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