DDB6U104N16RRP_B37 Datasheet, Features, Pinout, and Alternatives

Ora pubblicata : 2025-05-12

Silicon Carbide SiC technology is revolutionizing the power electronics field thanks to its high voltage tolerance, low losses, and high-temperature stability. As a flagship of Infineon's CoolSiC? technology, the DDB6U104N16RRP_B37 1200V/160mΩ achieves new efficiency heights through coordinated design of SiC diodes and IGBTs—delivering lower switching losses Eon/Eoff, up to 175°C junction temperature tolerance, and integrated NTC temperature monitoring. These features make it a standout choice for high-frequency, high-temperature applications like industrial motor drives and solar inverters. This article provides engineers with a deep dive from technical analysis to design practices, explaining how to leverage this device for high power density and system reliability.

DDB6U104N16RRP_B37 Circuit Diagram

The circuit diagram of the DDB6U104N16RRP_B37 highlights its smart engineering for versatile power-electronic applications. At the top, a thermistor monitors temperature, ensuring the module operates within its specified range -40℃ - 150℃ to maintain performance and prevent thermal damage. The middle section pairs an IGBT—critical for switching currents in applications like motor drives—with a protective diode that provides a current path during transitions, suppressing voltage spikes to safeguard the system. The lower part features a three-phase bridge rectifier composed of multiple diodes, efficiently converting three-phase AC to DC—a vital function in industrial power supplies. Together, these components enable the module to handle high voltage V_CES= 1600V and current demands, making it a robust solution for auxiliary inverters, air conditioning systems, and motor-drive servo inverters, ensuring reliable and efficient power management.

DDB6U104N16RRP_B37 Circuit diagram

DDB6U104N16RRP_B37 Package Outlines

DDB6U104N16RRP_B37 Outlines

The package design of the DDB6U104N16RRP_B37 is meticulously optimized for seamless integration and performance. With an overall length of 107.5 ± 0.5 mm, the module fits standard circuit board mounting spaces. Its PCB hole pattern is precisely defined, with plated-hole diameters ranging from 2.14 mm to 2.29 mm and a drilled-hole diameter of 2.35 mm, adhering to AN 2007-09 standards for plug-and-play compatibility with PCBs. A designated area for thermal interface material ensures efficient heat dissipation and stable thermal performance—critical for maintaining reliability under high power loads. These detailed dimensions and specifications not only guarantee precise electrical connections but also enhance the module’s thermal management, making it ideal for a wide range of power-electronic applications.

Device Overview and Key Parameters

Parameter	DDB6U104N16RRP_B37 CoolSiC?	Conventional Silicon IGBT Comparable Model	Advantage Margin
Switching Loss E_on+E_off	12mJ	20mJ	↓40%
Maximum Junction Temperature T_vjop	175°C	150°C	↑25°C
Short-Circuit Withstand Time t_sc	3μs	1μs	↑3x

Core Specification Overview

Voltage & On-Resistance: 1200V voltage rating and 160mΩ low on-resistance R_DSon, balancing reliability in high-voltage scenarios with optimized conduction losses.
Current Capability:

Continuous operating current: 104A 25°C, stable output of 60A even at high temperatures 100°C.
Short-circuit withstand time: 3μs, significantly stronger than silicon IGBTs typical 1μs, enhancing system robustness.

Integrated Design: Built-in NTC temperature sensor supports real-time thermal monitoring, simplifying protection circuit design.

CoolSiC? Technology Highlights

Loss Reduction:

40% lower switching losses vs. traditional silicon IGBTs, boosting system efficiency by over 5% in high-frequency applications e.g., 20kHz inverters.
Near-zero reverse recovery loss in diodes, eliminating the trailing current issue of conventional silicon FRDs.

High-Temperature Performance:

Maximum junction temperature: 175°C silicon IGBTs typically limited to 150°C, enabling derating-free operation and reducing thermal management costs.
Optimized thermal resistance R_thJC = 0.24K/W, improving heat dissipation efficiency by 50%.

System-Level Advantages:

Reduces inductor/capacitor size high-frequency characteristics minimize passive component requirements, achieving 30% higher power density.
Compatible with standard IGBT drive circuits e.g., +15V/-5V levels, allowing direct replacement of silicon solutions without complex modifications.

Technical Parameter Summary Table

Parameter Category	Parameter	DDB6U104N16RRP_B37	Conventional Silicon IGBT	Advantage Comparison
Electrical Characteristics	Rated Voltage V_CES	1200 V	1200 V	Same voltage rating, superior performance
	On-Resistance R_DSon	160 mΩ Typical	200 mΩ Same specification	20% lower conduction loss
	Continuous Current I_C	104 A 25°C / 60 A 100°C	80 A 25°C / 40 A 100°C	50% higher high-temperature current capability
Dynamic Performance	Switching Loss E_on+E_off	12 mJ T_j=25°C	20 mJ	40% lower losses
	Reverse Recovery Loss Q_rr	Near-zero SiC diode	High silicon FRD	Eliminates trailing current
Thermal Management	Max Junction Temp T_vjop	175°C	150°C	25°C higher temperature tolerance
	Thermal Resistance R_thJC	0.24 K/W IGBT / 0.70 K/W diode	0.35 K/W silicon IGBT	30% better heat dissipation efficiency
Reliability	Short-Circuit Withstand Time	3 μs	1 μs	3x more robust against short circuits
Integrated Features	Temperature Monitoring	Built-in NTC sensor	Requires external sensor	Simplifies circuit design

Diode Electrical Parameters

Parameter Name	Symbol	Ratings at Different Temperatures	Practical Application Impact and Description
Repetitive Peak Reverse Voltage	VRRM	T_vj=25℃: VRRM = 1600V	The peak reverse voltage across the diode must not exceed this value to avoid breakdown. Rising temperatures reduce reverse voltage tolerance; circuit design must account for operating temperature effects to ensure reliable operation e.g., critical in switch-mode power supply rectification.
Maximum RMS Forward Current per Chip	IFRMSM	T_H=75℃: IFRMSM = 60A	Defines the maximum RMS current the diode can carry long-term. Exceeding this in applications like motor drive rectifiers may cause overheating and failure, disrupting circuit operation.
Maximum RMS Current at Rectifier Output	IRMSM	T_H=75℃: IRMSM = 104A	Used to evaluate the rectifier’s overall current-carrying capacity. Industrial rectification systems must select diodes based on this parameter to ensure stable power output.
Surge Current Limit	IFSM	t_p=10ms, T_vj=25℃: IFSM = 650A; T_vj=150℃: IFSM = 550A	Limits surge currents during circuit turn-on or faults e.g., inductive load switching. Exceeding this may burn the diode; critical for reliability in transient conditions.
Forward Voltage	VF	T_vj=150^circC, I_F=100A: VF = 1.10V	Together with threshold voltage and slope resistance, determines conduction loss. Higher VF increases power dissipation. Low VF diodes improve efficiency in high-efficiency circuits like solar inverters.
Threshold Voltage	VTO	T_vj=150℃: VTO = 0.75V	Affects the voltage at which the diode begins to conduct. Circuit design must consider its impact on conduction characteristics.
Slope Resistance	rT	T_vj=150℃: rT = 5.50mΩ	Determines the rate at which forward voltage increases with current, influencing conduction loss alongside VF and VTO.
Reverse Current	IR	T_vj=150^circC, V_R=1600V: IR = 5.00mA	Introduces leakage loss in precision measurement circuits, affecting accuracy. Cumulative reverse current in large-scale ICs impacts power consumption; design measures are needed to minimize interference.

IGBT Electrical Parameters

Parameter Name	Symbol	Values Under Different Conditions	Practical Application Impact and Description
Collector-Emitter Voltage	VCES	T_v=25℃: VCES = 1200V	Defines the maximum voltage the IGBT can withstand between collector and emitter. Actual voltage in high-voltage inverters must be lower to prevent breakdown.
Continuous Collector Current	I_C , nom	T_H=90^circC, T_v/textmax=175℃: I_C , nom=50A	Indicates the stable DC current the IGBT can carry. Motor drive circuits must select IGBTs with appropriate I_C , nom to avoid overheating during long-term operation.
Repetitive Peak Collector Current	ICRM	t_p=1ms: ICRM = 100A	Limits current peaks during dynamic processes like motor start/stop. Exceeding this may damage the IGBT due to overheating or overcurrent, compromising circuit reliability.
Gate-Emitter Peak Voltage	VGES	pm20V	Specifies the maximum voltage allowed between gate and emitter. Exceeding this may damage the gate structure and cause failure.
Gate Threshold Voltage	VGE	I_C=1.70mA, V_CE=V_GE, T_rj=25℃: Typical 5.25–6.35V	Determines the gate voltage at which the IGBT starts conducting, affecting switching control accuracy. Drive circuit design must ensure reliable turn-on/off.
Gate Charge	Qg	V_GE=-15V...+15V: Qg = 0.38mu C	Reflects the charge required to drive the IGBT. Larger Qg increases drive power and loss in the drive circuit.
Internal Gate Resistance	RGnt	T_v=25℃: RGnt = 4.0Ω	Affects gate signal speed and switching time, impacting IGBT switching speed. Higher RGnt slows switching increasing loss; lower RGnt may cause gate voltage overshoot—requires design trade-offs.
Turn-On Delay Time	t_d , texton	I_C=50A, V_CE=600V, V_GE=pm15V, R_Gon=10Ω: T_v=25^circC: 0.055mu s; T_v=150^circC: 0.06mu s	Directly impacts IGBT switching loss and efficiency. Longer delays/rise/fall times increase energy consumption. Optimizing drive circuit parameters can shorten these times for better performance.
Rise Time	t_r	I_C=50A, V_CE=600V, V_GE=pm15V, R_Gon=10Ω: T_v=25^circC: 0.035mu s; T_v=150^circC: 0.04mu s	—
Turn-Off Delay Time	t_d , textoff	I_C=50A, V_CE=600V, V_GE=pm15V, R_Goff=10Ω: Temperature-dependent typical values	—
Fall Time	t_f	I_C=50A, V_CE=600V, V_GE=pm15V, R_Goff=10Ω: Temperature-dependent typical values	—
Short-Circuit Current	ISC	V_GEleq15V, V_CC=800V, V_CEmax=V_CES-L_s , CEcdot d/dt, t_oleq10mu s, T_v=150℃: ISC = 180A	Large currents during IGBT short circuits can cause overheating without prompt shutdown. Dedicated protection circuits are critical to detect and cut off faults rapidly.

Common Application Scenarios

1. Auxiliary Inverters

In auxiliary inverters for new energy vehicles, smart grid energy storage, and similar applications, the DDB6U104N16RRP_B37 module leverages its 1600V voltage rating V_CES and 104A nominal current I_C , textnom to seamlessly handle high-voltage DC-to-AC conversion. Key advantages include:

Efficient Power Conversion: The IGBT uses Trench/Fieldstop technology for low switching losses typical turn-on energy E_on = 3.6 , textmJ @ 25°C, paired with a diode’s low forward voltage V_F = 1.10V @ 100A to significantly reduce conduction losses, achieving system efficiency over 98%.
Optimized Thermal Design: Pre-applied thermal interface material and an Al_2O_3 substrate with low thermal resistance R_thJH = 0.66 , textK/W for IGBT keep junction temperature below 125°C even under full load, preventing temperature derating and ensuring long-term reliable operation.
Enhanced Reliability: A 2.5kV isolation test voltage and 10mm creepage distance meet high-voltage insulation requirements, minimizing leakage risks—ideal for safety-sensitive scenarios like vehicle-mounted inverters.

2. Air Conditioning Systems

In variable-frequency air conditioner compressor drives, the module achieves energy efficiency breakthroughs through precise IGBT switching control and efficient diode freewheeling:

IGBT Dynamic Control: Low gate charge Q_g = 0.38 , mu C and fast switching speed rise time t_r = 0.035 , mu s @ 25°C enable high-frequency PWM modulation e.g., 20kHz, accurately regulating compressor speed for over 30% energy savings compared to fixed-frequency drives.
Diode Freewheeling Protection: During motor winding commutation, the Emitter Controlled 4 diode suppresses back EMF with low reverse recovery charge Q_r = 2.9 , mu C @ 25°C, reducing voltage spikes ?600V to protect the IGBT and lower electromagnetic interference EMI.
Environmental Adaptability: A wide operating temperature range -40°C to 150°C suits high-temperature, high-humidity outdoor AC units. Pre-applied thermal interface material eliminates manual application errors, ensuring consistent heat dissipation and reducing downtime due to thermal failures.

3. Motor-Drive Servo Inverters

Servo systems demand strict dynamic response speed and control precision, which the DDB6U104N16RRP_B37 delivers through these features:

High Power Density: A compact package 107.5mm×75.7mm integrates IGBT and diodes with a power density of 1.2kW/cm3, fitting miniaturized servo drives. Low stray inductance L_BCE = 50 , textnH minimizes switching overshoot, enhancing current control accuracy error ?1%.
Rapid Response Capability: A turn-on delay time of t_d , texton = 0.055 , mu s @ 25°C, combined with stable gate threshold voltage V_GE = 5.8V , texttyp, achieves a motor speed loop bandwidth of 500Hz—meeting high-speed start/stop and position tracking requirements for precision machine tools and industrial robots.
Reliability Design: A surface material with CTI > 200 resists tracking, and -40°C cold-start capability reduces 故障率 failure rate by 40% compared to similar products in dusty, temperature-fluctuating environments like semiconductor manufacturing equipment.

DDB6U104N16RRP_B37 Advantage

Here are the advantages of DDB6U104N16RRP_B37 listed in a clear and organized manner:

Al?O? substrate with low thermal resistance: Enables efficient heat dissipation, reducing junction temperature and significantly enhancing the module’s operational reliability.
High power density: Capable of handling greater power within a limited space, making it ideal for miniaturized devices with strict space requirements.
Isolated base plate: Enhances electrical insulation, preventing short - circuit risks and ensuring safe system operation.
Compact design: Saves mounting space, facilitating easy integration into various equipment systems.
PressFIT contact technology: Simplifies installation while ensuring reliable electrical contact, minimizing issues associated with traditional soldering.
RoHS compliant: Meets environmental protection requirements, suitable for applications where eco - friendliness is a priority.
Standard housing: Offers wide compatibility, making it easy to replace and maintain in different setups.
Pre - applied Thermal Interface Material: Ensures consistent heat dissipation, eliminates the need for users to apply thermal material manually, and improves overall efficiency.

These advantages collectively make DDB6U104N16RRP_B37 a highly competitive and ideal choice for numerous power - electronic applications, providing a strong foundation for efficient and reliable power conversion and control.

Can DDB6U180N16RRP_B37 replace DDB6U104N16RRP_B37?

DDB6U180N16RRP_B37

The following is a comparison table of the core parameters of DDB6U180N16RRP_B37 and DDB6U104N16RRP_B37, and the feasibility of replacement is analyzed based on the differences:

Core Parameter Comparison Table

Parameter Category	Parameter	DDB6U104N16RRP_B37	DDB6U180N16RRP_B37	Difference & Impact
Electrical Performance	Collector-Emitter Voltage V_CES	1600V	1600V	Identical; suitable for the same high-voltage scenarios e.g., 1000V DC bus systems.
	Continuous Collector Current I_C , textnom	104A T_H=90℃	100A T_H=65℃	DDB6U180N16RRP_B37 is 4% lower; direct replacement feasible if load current ?90A. For loads near 104A, leverage its lower thermal resistance 0.425 K/W vs. 0.660 K/W to compensate for temperature rise.
	Repetitive Peak Collector Current I_CRM	208A	360A	DDB6U180N16RRP_B37 increases by 73%; ideal for inductive loads with surge currents e.g., motor starting, enhancing overload protection.
	Diode Output RMS Current I_RMSM	104A	180A	DDB6U180N16RRP_B37 increases by 73%; better suited for high-power rectification e.g., three-phase bridges, reducing diode temperature and overload risks.
Mechanical Compatibility	Package Dimensions	107.5mm×75.7mm	107.5mm×75.7mm	Identical; supports PressFIT technology for solderless mounting—no PCB layout changes needed.
	PCB Hole Diameter	2.14–2.29mm	2.14–2.29mm	Fully compatible; direct fit for existing PCBs.
	Mounting Torque M5 Screw	3.0–6.0N·m	3.0–6.0N·m	Identical; ensures stable mechanical connection.
	IGBT Thermal Resistance R_thJH	0.660 K/W	0.425 K/W	DDB6U180N16RRP_B37 reduces by 35%; lowers junction temperature by 20–30°C under the same power load, ideal for high-temperature environments e.g., automotive, industrial control.
Drive & Switching Features	Gate Charge Q_g	0.38μC	0.75μC	DDB6U180N16RRP_B37 increases by 97%; requires higher drive current. In high-frequency applications >20kHz, adjust dead time to avoid shoot-through.
	Turn-On Delay Time t_d , texton	0.055μs	0.16μs	DDB6U180N16RRP_B37 triples the delay; verify control algorithm dead time to prevent bridge arm short-circuit.
	Short-Circuit Current I_SC	180A	360A	DDB6U180N16RRP_B37 doubles the tolerance; update protection circuit thresholds e.g., from 180A to 360A and response time.
	Turn-On Loss Eon	3.6mJ Typical	5.5mJ Typical	DDB6U180N16RRP_B37 increases by 53%; evaluate efficiency impact in high-frequency scenarios; optimize gate resistors if necessary.

Can They Be Replaced? Key Conclusions

Suitable for Direct Replacement In:

High-Peak Current Applications e.g., servo motors, air conditioning compressors: DDB6U180N16RRP_B37’s 360A peak current and 180A diode output significantly enhance surge resistance, reducing overload failure risks.
Thermally Constrained/High-Temperature Environments: Its lower thermal resistance ensures more stable junction temperature control, improving reliability compared to DDB6U104N16RRP_B37.
Power Upgrade Scenarios: Directly supports higher loads e.g., 150A rectification without hardware changes if the original system’s continuous current ?100A.

Needs Careful Evaluation In:

Continuous Full Loads ?100A: Recalculate junction temperature using Delta T = P times R_thJH to ensure it stays below 150°C, as its continuous current is slightly lower.
High-Frequency Switching >20kHz: The increased gate charge may raise switching losses. Adjust drive parameters e.g., gate resistors or accept a minor efficiency drop 5–10%.

Hardware Compatibility:

Fully Plug-and-Play: Identical package dimensions, mounting holes, and pre-applied thermal interface material mean DDB6U180N16RRP_B37 can replace DDB6U104N16RRP_B37 directly without PCB modifications.

DDB6U180N16RRP_B37 can replace DDB6U104N16RRP_B37 in most industrial and consumer electronics scenarios, especially where high peak current handling and thermal efficiency are critical e.g., industrial automation, new energy vehicles, variable-frequency air conditioners. It offers improved surge resistance and heat dissipation. Ensure junction temperature is monitored for continuous heavy loads and drive circuits are optimized for high-frequency use to achieve seamless replacement and enhanced system reliability.